Image pickup device, image pickup apparatus, and production apparatus and method

ABSTRACT

[Object] The present disclosure relates to an image pickup device, an image pickup apparatus, and a production apparatus and method with which protection performance of an organic film can he improved. 
     [Solving Means] An image pickup device according to the present disclosure includes: a photoelectric conversion device that photoelectrically converts incident light that has entered from outside; an organic film that is formed by being laminated on a light-incident surface side of the photoelectric conversion device; and an inorganic film that is formed by being laminated on a light-incident surface and side surfaces of the organic film and seals the organic film, the side surface of the organic film being tilted by an angle at which a thickness of the inorganic film that is formed by being laminated on the side surfaces becomes a predetermined thickness. The present disclosure is applicable to an image pickup device, an image pickup apparatus, a production apparatus for image pickup device, and the like.

TECHNICAL FIELD

The present disclosure relates to an image pickup device, an imagepickup apparatus, and a production apparatus and method, moreparticularly, to an image pickup device, an image pickup apparatus, anda production apparatus and method with which protection performance ofan organic film can be improved.

BACKGROUND ART

From the past, there has been a method of depositing, by CVD or vapordeposition, an inorganic film for preventing moisture permeation on asurface of an optical filter layer (organic film) formed of an organicmaterial, that is provided on a photoelectric conversion device (see,for example, Patent Documents 1 and 2).

Patent Document 1: Japanese Patent Application Laid-open No. Sho60-247202

Patent Document 2: Japanese Patent Application Laid-open No. Hei5-283668

SUMMARY OF INVENTION Problems to be Solved by the Invention

In the method of the related art, however, it has been difficult todeposit the inorganic film on side surfaces of the optical filter layersince the side surfaces of the optical filter layer become substantiallyperpendicular to the film. Therefore, the side surfaces of the opticalfilter layer are exposed, and thus there has been a fear that moisturesand the like permeate into the optical filter layer (organic film) fromthat portion to cause deterioration of the optical filter layer (organicfilm).

For example, FIG. 2 of Patent Document 1 shows a state where aprotection film is formed on side surfaces of a colored layer as anorganic film, but a certain amount of thickness is required in theprotection film for bearing an effect of suppressing permeation ofmoistures and the like. However, in actuality, there has been a fearthat since it is difficult to deposit an inorganic film on vertical sidesurfaces as described above by CVD or vapor deposition, a protectionfilm having a sufficient thickness cannot he formed and moistures andthe like permeate into the colored layer (organic film) from thatportion to cause deterioration of the colored layer (organic film).

In addition, for example, FIGS. 1 and 2 of Patent Document 2 show astate where the protection film is laminated on an interlayer film orthe like as the organic film. However, since the vertical side surfacesare exposed, moistures and the like permeate into the interlayer filmfrom the side surfaces of the interlayer film as the organic film tocause deterioration of the interlayer film.

The present disclosure has been made in view of the circumstances asdescribed above and aims at improving protection performance of anorganic film.

Means for Solving the Problems

According to an aspect of the present disclosure, there is provided animage pickup device including: a photoelectric conversion device thatphotoelectrically converts incident light that has entered from outside;an organic film that is formed by being laminated on a light-incidentsurface side of the photoelectric conversion device; and an inorganicfilm that is formed by being laminated on a light-incident surface andside surfaces of the organic film and seals the organic film, the sidesurfaces of the organic film being tilted by an angle at which athickness of the inorganic film that is formed by being laminated on theside surfaces becomes a predetermined thickness.

The inorganic film may be a protection film that suppresses permeationof moisture or oxygen, or both of them, and the side surfaces of theorganic film may be tilted by an angle at which the thickness of theinorganic film that is formed by being laminated on the side surfacesbecomes a thickness with which a sufficient effect as the protectionfilm can be obtained.

The inorganic film may be further formed by being laminated on a layerthat is in contact with a surface of the organic film opposite to thelight-incident surface or a layer that is formed more on the oppositeside of the light-incident surface than the layer that is in contactwith the surface of the organic film opposite to the light-incidentsurface, in a peripheral section of the organic film.

The image pickup device may further include ribs that are formed bybeing laminated on the light-incident surface of the inorganic film.

The image pickup device may further include a transparent layer that isformed of glass or resin and formed by being laminated on thelight-incident surface of the inorganic film and the ribs.

The inorganic film may be further formed by being laminated on a surfaceof the organic film opposite to the light-incident surface.

The inorganic film may be formed such that a plurality of layers havingdifferent refractive indexes are structured, and the side surfaces ofthe organic film may be tilted by an angle at which the thickness of theinorganic film that is formed by being laminated on the side surfacesbecomes a thickness that transmits a predetermined wavelength range ofthe incident light or a thickness that suppresses transmission of thepredetermined wavelength range of the incident light.

Transmission wavelength characteristics of the inorganic film that isformed by being laminated on the light-incident surface of the organicfilm may differ from transmission wavelength characteristics of theinorganic film that is formed by being laminated on the side surfaces ofthe organic film.

The inorganic film that is formed by being laminated on thelight-incident surface of the organic film may transmit a wavelengthrange that is photoelectrically converted by the photoelectricconversion device, and the inorganic film that is formed by beinglaminated on the side surfaces of the organic film may suppresstransmission of the wavelength range that is photoelectrically convertedby the photoelectric conversion device.

The inorganic film that is formed by being laminated on thelight-incident surface of the organic film may transmit a wavelengthrange of visible light, and the inorganic film that is formed by beinglaminated on the side surfaces of the organic film may suppresstransmission of the wavelength range of visible light.

The thickness of the inorganic film that is formed by being laminated onthe light-incident surface of the organic film and the thickness of theinorganic film that is formed by being laminated on the side surfaces ofthe organic film may differ.

A ratio of the thickness of the inorganic film that is formed by beinglaminated on the side surfaces of the organic film to the thickness ofthe inorganic film that is formed by being laminated on thelight-incident surface of the organic film may be equal to or smallerthan a ratio of a lower limit of the wavelength range transmittedthrough the inorganic film that is formed by being laminated on thelight-incident surface of the organic film to an upper limit of thewavelength range.

The number of layers of the inorganic film that is formed by beinglaminated on the light-incident surface of the organic film may differfrom the number of layers of the inorganic film that is formed by beinglaminated on the side surfaces of the organic film.

According to another aspect of the present disclosure, there is providedan image pickup apparatus including: an image pickup device including aphotoelectric conversion device that photoelectrically converts incidentlight that has entered from outside, an Organic film that is formed bybeing laminated on a light-incident surface side of the photoelectricconversion device, and an inorganic film that is formed by beinglaminated on a light-incident surface and side surfaces of the organicfilm and seals the organic film, the side surfaces of the organic filmbeing tilted by an angle at which a thickness of the inorganic film thatis formed by being laminated on the side surfaces becomes apredetermined thickness; and an image processing section that perform isimage processing on pickup image data obtained by the image pickupdevice.

According to another aspect of the present disclosure, there is provideda production apparatus that produces an image pickup device, including:a photoelectric conversion device formation section that forms aphotoelectric conversion device that photoelectrically converts incidentlight that enters from outside; an organic film formation section thatforms an organic film by laminating it on a light-incident surface sideof the photoelectric conversion device; an organic film processingsection that processes the organic film formed by the organic filmformation section while imparting, to side surfaces of the organic film,a tilt by an angle at which a thickness of the inorganic film that isformed by being laminated on the side surfaces becomes a predeterminedthickness; and an inorganic film formation section that forms aninorganic film that seals the organic film by laminating it on alight-incident surface and side surfaces of the organic film.

The inorganic film formation section may form the inorganic filmlaminated on the light-incident surface of the organic film and theinorganic film laminated on the side surfaces of the organic film in thesame step.

The inorganic film formation section may form the inorganic filmlaminated on the light-incident surface of the organic film and theinorganic film laminated on the side surfaces of the organic film indifferent steps.

According to another aspect of the present disclosure, there is provideda production method for a production apparatus that produces an imagepickup device, including: forming a photoelectric conversion device thatphotoelectrically converts incident light that enters from outside;forming an organic film by laminating it on a light-incident surfaceside of the photoelectric conversion device; processing the formedorganic film while imparting, to side surfaces of the organic film, atilt by an angle at which a thickness of the inorganic film that isformed by being laminated on the side surfaces becomes a predeterminedthickness; and forming an inorganic film that seals the organic film bylaminating it on a light-incident surface and side surfaces of theorganic film.

According to another aspect of the present disclosure, there is provideda production apparatus that produces an image pickup device, including:an image pickup device formation section that forms an image pickupdevice that photoelectrically converts incident light that enters fromoutside; a rib formation section that forms ribs on a transparent layerformed of glass or resin; an inorganic film formation section that formsan inorganic film by laminating it on a surface of the transparent layeron which the ribs are farmed by the rib formation section; an organicfilm formation section that forms an organic film by laminating it onthe inorganic film formed by being laminated on the transparent layer bythe inorganic film formation section; and a bonding section that bondsthe organic film formed by being laminated on the transparent layer bythe organic film formation section and a light-incident surface of theimage pickup device formed by the image pickup device formation section.

According to another aspect of the present disclosure, there is provideda production method for a production apparatus that produces an imagepickup device, including: forming an image pickup device thatphotoelectrically converts incident light that enters from outside;forming ribs on a transparent layer formed of glass or resin; forming aninorganic film by laminating it on a surface of the transparent layer onwhich the ribs are formed; forming an organic film by laminating it onthe inorganic film formed by being laminated on the transparent layer;and bonding the organic film formed by being laminated on thetransparent layer and a light-incident surface of the formed imagepickup device.

According to the aspect of the present disclosure, the image pickupdevice includes: the photoelectric conversion device thatphotoelectrically converts incident light that has entered from outside;the organic film that is formed by being laminated on the light-incidentsurface side of the photoelectric conversion device; and the inorganicfilm that is formed by being laminated on the light-incident surface andside surfaces of the organic film and seals the organic film, the sidesurfaces of the organic film being tilted by an angle at which athickness of the inorganic film that is formed by being laminated on theside surfaces becomes a predetermined thickness.

According to the another aspect of the present disclosure, the imagepickup apparatus includes: the image pickup device including thephotoelectric conversion device that photoelectrically converts incidentlight that has entered from outside, the organic film that is formed bybeing laminated on the light-incident surface side of the photoelectricconversion device, and the inorganic film that is formed by beinglaminated on the light-incident surface and side surfaces of the organicfilm and seals the organic film, the side surfaces of the organic filmbeing tilted by an angle at which a thickness of the inorganic film thatis formed by being laminated on the side surfaces becomes apredetermined thickness; and the image processing section that performsimage processing on pickup image data obtained by the image pickupdevice.

According to the another aspect of the present disclosure, in theproduction apparatus that produces an image pickup device: thephotoelectric conversion device that photoelectrically converts incidentlight that enters from outside is formed; the organic film is formed bylaminating it on the light-incident surface side of the photoelectricconversion device; the formed organic film is processed while imparting,to side surfaces of the organic film, a tilt by an angle at which athickness of the inorganic film that is formed by being laminated on theside surfaces becomes a predetermined thickness; and the inorganic filmthat seals the organic film is formed by laminating it on thelight-incident surface and side surfaces of the organic film.

According to the another aspect of the present disclosure, in theproduction apparatus that produces an image pickup device: the imagepickup device that photoelectrically converts incident light that entersfrom outside is foamed; the ribs are formed on the transparent layerformed of glass or resin; the inorganic film is framed by laminating iton the surface of the transparent layer on which the ribs are formed;the organic film is formed by laminating it on the inorganic film formedby being laminated on the transparent layer; and the organic film formedby being laminated on the transparent layer and the light-incidentsurface of the formed image pickup device are bonded.

Effects of the Invention

According to the present disclosure, an object can be photographed, moreparticularly, moisture resistance performance can be improved.

BRIEF DESCRIPTION OF DRAWINGS

[FIG. 1] A cross-sectional diagram showing a partial structural exampleof an image pickup device.

[FIG. 2] An enlarged diagram showing a part of FIG. 1.

[FIG. 3] Cross-sectional diagrams showing another structural example ofthe image pickup device.

[FIG. 4] Cross-sectional diagrams showing other structural examples ofthe image pickup device.

[FIG. 5] Diagrams for explaining an example of transmission wavelengthcharacteristics.

[FIG. 6] Diagrams for explaining an example of transmission wavelengthcharacteristics design.

[FIG. 7] A diagram for explaining a structural example of an inorganicfilm.

[FIG. 8] Diagrams for explaining examples of a thickness of theinorganic film.

[FIG. 9] A cross-sectional diagram showing another structural example ofthe image pickup device.

[FIG. 10] A cross-sectional diagram showing another structural exampleof the image pickup device.

[FIG. 11] A block diagram showing a main structural example of aproduction apparatus.

[FIG. 12] A flowchart for explaining a flow of production processing.

[FIG. 13] Diagrams for explaining an example of a state of productionsteps.

[FIG. 14] A block diagram showing another structural example of theproduction apparatus.

[FIG. 15] A flowchart for explaining another example of the flow ofproduction processing.

[FIG. 16] Diagrams for explaining another example of the state ofproduction steps.

[FIG. 17] A block diagram showing another structural example of theproduction apparatus.

[FIG. 18] A flowchart for explaining another example of the flow ofproduction processing.

[FIG. 19] Diagrams for explaining another example of the state ofproduction steps.

[FIG. 20] Diagrams for explaining another example of the state ofproduction steps subsequent to FIG. 19.

[FIG. 21] A block diagram showing a main structural example of an imagepickup apparatus.

MODES FOR CARRYING OUT THE INVENTION

Hereinafter, configurations for embodying the present disclosure(hereinafter, referred to as embodiments) will be described. It shouldbe noted that the descriptions will be made in the following order.

1. First Embodiment (Image Pickup Device)

2. Second Embodiment (Production Apparatus)

3. Third Embodiment (image Pickup Apparatus)

<1. First Embodiment>

(Concern on Moisture Resistance of Organic Film)

From the past, a layer formed of an organic material (hereinafter, alsoreferred to as organic film) has been formed in an image pickup devicein some cases. For example, an optical filter layer formed of an organicmaterial is sometimes provided as an infrared cut filter. There has beena fear that such an, organic film is deteriorated due to permeation ofmoistures, oxygen, and the like when exposed to open air.

In this regard, for preventing permeation of moistures, oxygen, and thelike into such an organic film, providing a layer formed of an inorganicmaterial (hereinafter, also referred to as inorganic film) forsuppressing transmission of moistures, oxygen, and the like on a surfaceof the organic film (between organic film and open air) has beenconsidered. Such an inorganic film is formed by, for example, CVD(Chemical Vapor Deposition) or vapor deposition.

However, since side surfaces of the organic film become substantiallyvertical in the method of the past, it has been difficult to deposit theinorganic film on the side surfaces of the organic film. In the case ofCVD, for example, gas including a raw material (inorganic material inthis case) is energized by heat or light or plasma-enhanced at a highfrequency so that the raw material becomes radical to become highlyreactive and is absorbed and deposited on a substrate. Therefore, it hasat least been difficult to control the thickness and significantlydifficult to positively form an inorganic film having a sufficientthickness. As a result, a part or all of the side surfaces of theorganic film becomes exposed (including case where thickness ofinorganic film is insufficient), and thus there has been a fear thatmoistures, oxygen, and the like permeate into the organic film from thatportion to cause deterioration of the organic film.

<Specific Example of Protection Film>

As a specific example of the inorganic film that is formed as aprotection Elm for suppressing deterioration of the organic film asdescribed above, there is the protection films as disclosed in PatentDocuments 1 and 2.

FIG. 2 of Patent Document 1 shows a state where the protection film(inorganic film) is formed by a transparent metal-oxide film on sidesurfaces of a colored layer as the organic film. However, in actuality,there has been a fear that since it is difficult to deposit a protectionfilm having a sufficient thickness on vertical side surfaces asdescribed above, moistures, oxygen, and the like permeate into thecolored layer as the organic film from that portion to causedeterioration of the colored layer.

In addition, for example, FIGS. 1 and 2 of Patent Document 2 show astate where the protection film (inorganic film) is laminated on aninterlayer film or the like as the organic film. However, since thevertical side surfaces of the interlayer film are exposed as shown inFIGS. 1 and 2, there has been a fear that moistures, oxygen, and thelike permeate into the interlayer film from the side surfaces of theinterlayer film as the organic film to cause deterioration of theinterlayer film.

<Tilt of Side Surfaces of Organic Film>

In this regard, the side surfaces of the organic film formed in theimage pickup device are tilted by an angle at which the thickness of theinorganic film formed by being laminated on the side surfaces becomes apredetermined thickness. In addition, the inorganic film that suppressespermeation of moistures, oxygen, and the like into the organic film isformed by being laminated on a light-incident surface and side surfacesof the organic film, and thus the organic film is sealed.

With such a structure, it is possible to form, also on the side surfacesof the organic film, an inorganic film having enough thickness tosufficiently obtain the effect of suppressing permeation of moistures,oxygen, and the like into the organic film. In other words, protectionperformance of the organic film can be improved.

<Image Pickup Device>

FIG. 1 is a cross-sectional diagram showing a main structural example ofa pixel of the image pickup device to which the present technique isapplied. The organic-film-attached image pickup device 100 shown in FIG.1 is a back-irradiation-type CMOS (Complementary Metal OxideSemiconductor) image sensor that picks up an image of an object andacquires a pickup image as electrical signals. The organic-film-attachedimage pickup device 100 includes a plurality of pixels arranged in aplane such as in an array. Incident light is photoelectrically convertedat each pixel, and pixel signals of a pickup image are obtained. FIG. 1shows, as the cross-sectional diagram, an example of a laminatedstructure of a portion related to the light reception of theorganic-film-attached image pickup device 100. In FIG. 1, forconvenience of descriptions, the laminated structure is shownschematically. Also in FIG. 1, structures that are not used fordescribing the present technique are simplified or omitted.

Also in FIG. 2 and subsequent figures, structures necessary fordescribing the present technique are shown schematically as appropriateas in FIG. 1, and other structures will be simplified or omitted.

in FIG. 1, light from an object enters the organic-film-attached imagepickup device 100 downwardly from above in the figure. Although shownschematically in FIG. 1, the number of pixels of theorganic-film-attached image pickup device 100 is arbitrary. For example,scales of several hundred-thousand pixels, several million pixels,several ten-million pixels, and the like are assumed in general, but thenumber of pixels may be smaller than those or may be a single pixel.

As shown in FIG. 1, the organic-film-attached image pickup device 100includes an image pickup device 101, an infrared cut filter 102 as anorganic film formed by being laminated on a light-incident surface sideof the image pickup device 101, and a moisture-resistant film 103 thatseals the infrared cut filter 102.

The image pickup device 101 includes, for example, a photodiode(photoelectric conversion device that photoelectrically convertsincident light), a wiring layer, a light shield film, a flattening film,a color filter, and a collective lens that are formed on a siliconsubstrate and is capable of picking up images of an object and obtainingpickup images.

The infrared cut filter 102 as an example of the organic film formed ofan organic material is an optical filter that suppresses transmission ofinfrared light. In other words, the infrared cut filter 102 suppressesentering of infrared light into the image pickup device 101 (removesinfrared wavelength range components from incident light of image pickupdevice 101).

While the photoelectric conversion device that uses silicon hassensitivity in a wavelength range equal to or larger than a spectralluminous efficiency property of human beings, unnecessary near-infraredlight can be removed by providing the infrared cut filter 102 on thelight-incident surface side, and thus the image pickup device 101 canobtain pickup images close to the spectral luminous efficiency propertyof human beings.

It should be noted that the infrared cut filter 102 may suppresstransmission of all wavelength ranges of infrared light or suppresstransmission of partial wavelength ranges of infrared light. Moreover,light whose transmission is suppressed by the infrared cut filter 102 isnot limited to infrared light and may be light of any wavelength range.For example, a band-stop filter that suppresses transmission of visiblelight having a wavelength of about 650 nm to 750 nm may be used.Alternatively, for example, a bandpass filter that transmits onlyvisible light having a wavelength of about 400 nm to 650 nm may be used.

The infrared cut filter 102 is an organic film formed of an organicmaterial and is apt to deteriorate by moisture permeation due to lowmoisture resistance (apt to be optically influenced).

The moisture-resistant film 103 is an organic film that is formed of aninorganic material and formed by being laminated on a surface of theinfrared cut filter 102 including at least the light-incident surfaceand side surfaces to seal the infrared cut filter 102. Examples of theinorganic material include silver oxide (I) (Ag₂O), silver monoxide(AgO), aluminum oxide (Al₂O₃), aluminum fluoride (AlF₃), barium fluoride(BaF₂), cerium oxide (IV) (CeO₂), chromium oxide (III) (Cr₂O₃), chromiumsulfide (III) (Cr₂S₃), gadolinium fluoride (GdF₃), hafnium oxide (IV)(HfO₂) indium tin oxide (ITO), lanthanum fluoride (LaF₃), lithiumniobate (LiNbO₃), magnesium fluoride (MgF₂), magnesium oxide (MgO),sodium hexafluoro aluminate (Na₃AlF₆), niobium pentoxide (Nb₂O₅),nichrome (Ni—Cr), nitride of nichrome (NiCrNx), nitrogen oxide (OxNy),silicon nitride (SiN₄), silicon oxide (SiO), silicon dioxide (SiO₂),tantalum pentoxide (Ta₂O₅), titanium trioxide (Ti₂O₃), titaniumpentoxide (Ti₃O₅), titanium oxide (TiO), titanium dioxide (TiO₂),tungsten oxide (WO₃), yttrium oxide (Y₂O₃), yttrium fluoride (YF₃), zincsulfide (ZnS), zirconium dioxide (ZrO₂), and indium oxide (In₂O₃),though other materials may of course be used.

The moisture-resistant film 103 is deposited in a thickness with whichmoisture permeation with respect to the infrared cut filter 102 can besufficiently suppressed.

<Side Surfaces of Organic Film>

FIG. 2 is an enlarged diagram of a portion surrounded by the dotted line104 in FIG. 1, that is, a portion in the vicinity of the side surface ofthe infrared cut filter 102 as the organic film.

In FIG. 2, a flattening film 111 is a structure of the image pickupdevice 101 and is a layer that flattens a surface of a non-flatcollective lens. The flattening film 111 is a layer adjacent to asurface of the infrared cut filter 102 opposite to the light-incidentsurface.

Also in FIG. 2, the double-headed arrow 112 indicates a portion wherethe light-incident surface of the infrared cut filter 102 (upper surfacein FIG. 2) is formed. Moreover, the double-headed arrow 113 indicates aportion where the side surface of the infrared cut filter 102 is formed.Further, the double-headed arrow 114 indicates a portion where theinfrared cut filter 102 is not formed (peripheral portion of infraredcut filter 102).

As shown in FIG. 2, the light-incident surface of the infrared cutfilter 102 (portion indicated by double-headed arrow 112) is formedsubstantially as a plane while being substantially parallel to thesurface opposite to the light-incident surface (light-incident surfaceof flattening film 111). Further, the side surface of the infrared cutfilter 102 (portion indicated by double-headed arrow 113) is notvertical and is tilted by a predetermined angle α with respect to thesurface opposite to the light-incident surface as indicated by thedouble-headed arrow 115.

The angle α of the side surface of the infrared cut filter 102 is set ata level of angle at which the thickness 117 of the moisture-resistantfilm 103 laminated on the side surface (portion indicated bydouble-headed arrow 113) becomes a thickness with which moisturepermeation with respect to the infrared cut filter 102 can besufficiently suppressed. In other words, the side surface of theinfrared cut filter 102 is tilted by an angle at which the thickness 117of the moisture-resistant film 103 (inorganic film) becomes a thicknesswith which a sufficient effect as the protection film can be obtained(i.e., thickness with which sufficient moisture resistance can beobtained).

The angle α of the side surface may be any angle as long as it is anangle at which the thickness 117 of the moisture-resistant film 103becomes a thickness with which a sufficient effect as the protectionfilm can be obtained (i.e., thickness with which sufficient moistureresistance can be obtained).

For example, when the angle α of the side surface is about 90 degrees ormore, there is a fear that it becomes difficult to control the thickness117 of the moisture-resistant film 103 laminated on the side surface asdescribed above, with the result that the thickness of themoisture-resistant film 103 cannot be made sufficient and the infraredcut filter 102 cannot obtain sufficient moisture resistance.

In this regard, the angle α of the side surface of the infrared cutfilter 102 is set at an angle smaller than 90 degrees, for example. Withsuch a structure, the moisture-resistant film 103 can be deposited suchthat the thickness 117 of the moisture-resistant film 103 on the sidesurfaces of the infrared cut filter 102 becomes a sufficient thicknesswith ease by methods of CVD, vapor deposition, and the like.

It should be noted that the thickness 117 of the moisture-resistant film103 deposited by CVD, vapor deposition, and the like under the samecondition differs depending on the size of the angle α. The thickness117 of the moisture-resistant film 103 basically varies linearlyaccording to the size of the angle α, and the thickness tends to becomesmaller as the angle α becomes larger and become larger as the angle αbecomes smaller. In addition, an area necessary for forming the sidesurfaces of the infrared cut filter 102 naturally becomes smaller as theangle α becomes larger and becomes larger as the angle α becomessmaller.

Moreover, as will be described later, there are a method of depositing,using a mask, the moisture-resistant film 103 at the portion indicatedby the double-headed arrow 113 and the moisture-resistant film 103 atthe portions indicated by the double-headed arrows 112 and 114 indifferent steps and a method of depositing the moisture-resistant film103 at the portion indicated by the double-beaded arrow 112, the portionindicated by the double-headed arrow 113, and the portion indicated bythe double-headed arrow 114 all in the same step. In the case of thelatter method, as the angle α of the side surface of the infrared cutfilter 102 becomes smaller, the thickness 117 of the moisture-resistantfilm 103 on the side surface of the infrared cut filter 102 (portionindicated by double-headed arrow 113) is more approximated to thethickness 116 of the moisture-resistant film 103 on the light-incidentsurface of the infrared cut filter 102 (portion indicated bydouble-headed arrow 112) or the thickness 118 of the moisture-resistantfilm 103 in the peripheral portion of the infrared cut filter 102(portion indicated by double-headed arrow 114).

Considering the tendencies as described above, the angle α can be setarbitrarily within a range in which the thickness 117 of themoisture-resistant film 103 becomes a thickness with which a sufficienteffect as the protection film can be obtained (i.e., thickness withwhich sufficient moisture resistance can be obtained).

In other words, the moisture-resistant film 103 is deposited in athickness with which moisture permeation with respect to the infraredcut filter 102 can be sufficiently suppressed in any of the portionsindicated by the double-headed arrows 112 to 114. At this time, sincethe light-incident surface of the infrared cut filter 102 and thelight-incident surface of the flattening film 111 in the peripheralportion of the infrared cut filter 102 are formed substantially inparallel, the thickness 116 and the thickness 118 can be made sufficientwith ease. Moreover, as described above, since the side surfaces of theinfrared cut filter 102 are tilted by the angle α, the thickness 117 canalso be made sufficient with ease.

It should be noted that since the moisture-resistant film 103 only needsto seal the infrared cut filter 102, it only needs to be formed by beinglaminated on at least the light-incident surface and side surfaces ofthe infrared cut filter 102 (i.e., only needs to he formed at portionsindicated by double-headed arrows 112 and 113). Of course, themoisture-resistant it 103 may be formed by being laminated on theflattening film 111 also in the peripheral portion of the infrared cutfilter 102 (portion indicated by double-headed arrow 114) as shown inFIG. 2. With such a structure, it becomes possible to more positivelysuppress permeation of moistures into the infrared cut filter 102 frominterlayers of the flattening film 111 and the moisture-resistant film103.

It should be noted that as long as the tilt angle is controlled like theangle α described above, the side surfaces of the infrared cut filter102 as the organic film may either be flat surfaces or curved surfaces.

<Transparent Layer and Ribs>

The organic-film-attached image pickup device 100 may further include atransparent layer 124 formed by being laminated on the light-incidentsurface of the moisture-resistant film 103 as shown in FIG. 3A. Thetransparent layer 124 is formed of glass (e.g., quartz), resin, or thelike.

Further, ribs 125 may be folioed between the moisture-resistant film 103and the transparent layer 124 on the side surfaces of the infrared cutfilter 102 and the peripheral portion thereof FIG. 3B shows an enlargeddiagram of a portion surrounded by a dotted line 126 of FIG. 3A.

As indicated by a dotted arrow 127 in FIG. 3B, moistures generally aptto permeate between the transparent layer 124 and the ribs 125. However,as described above, also on the side surface 102S of the infrared cutfilter 102, the moisture-resistant film 103 is formed in a thicknesswith which sufficient moisture resistance can be obtained. Therefore, inthe organic-film-attached image pickup device 100, moistures that havepermeated as indicated by the dotted arrow 127 can also he suppressedfrom entering the infrared cut filter 102 (organic film) by themoisture-resistant film 103.

<Moisture-Resistant Film of Peripheral Section>

It should be noted that the light-incident surface of the flatteningfilm 111 (surface on which moisture-resistant film 103 is laminated) inthe peripheral section of the infrared cut filter 102 may be a flatsurface as shown in FIG. 4A or may include concavity and convex as shownin FIGS. 4B and 4C.

<Optical Property Control Based on Thickness of Side Surfaces>

By tilting the side surfaces of the infrared cut filter 102 by the angleα as described above, light also enters from the side surfaces as shownin FIG. 5A. However, since the angle of the side surfaces differs fromthat of the light-incident surface and the thicknesses of the infraredcut filter 102 also differ, light that has entered from the sidesurfaces and light that has entered from the light-incident surfacehighly likely differ in optical features. In other words, whenattempting to cause light that has entered from the side surfaces toenter the photoelectric conversion device to be photoelectricallyconverted, there is a fear that optical features of incident light willdiffer between pixels that photoelectrically convert light that hasentered from the side surfaces and pixels that photoelectrically convertlight that has entered from the light-incident surface, to thus causelowering of image quality of pickup images. Therefore, it is desirablefor the positions of the side surfaces of the infrared cut filter 102(organic film) to be outside an effective pixel area.

Moreover, even in such a case, while light that enters the side surfacesas indicated by the arrow 131 is partially reflected on the surface ofthe moisture-resistant film 103 as indicated by the arrow 132A, otherpart enters the infrared cut filter 102 (organic film) as indicated bythe arrow 132B and reaches the image pickup device 101. This incidentlight reaches the photoelectric conversion device while repeating thereflection on the interlayer between the infrared cut filter 102 and thelight-incident surface of the image pickup device 101 (light-incidentsurface of flattening film 111) and the reflection on the interlayerbetween the infrared cut filter 102 (organic film) and themoisture-resistant film 103 (inorganic film) and sometimes appears asnoises such as ghosts and flares in pickup images.

In this regard, the moisture-resistant film 103 (inorganic film) isconstituted of a plurality of layers (structure moisture-resistant film103 as multi-layer structure) having different refractive indexes so asto transmit light of a desired wavelength range. In addition, as shownin FIG. 5B, the thickness 135 of the moisture-resistant film 103A at aportion of the light-incident surface (upper surface) of the infraredcut filter 102 and the thickness 136 of the moisture-resistant film 103Bat a portion of the side surfaces of the infrared cut filter 102 aredifferentiated.

More specifically, the thickness 135 is set to be a thickness with whichthe moisture-resistant film 103A at the portion of the light-incidentsurface (upper surface) of the infrared cut filter 102 transmits lightof a desired wavelength range (e.g., visible light), and the thickness136 is set to be a thickness with which the moisture-resistant film 103Bat the portion of the side surfaces of the infrared cut filter 102suppresses transmission of light at that wavelength range (e.g., visiblelight).

When the number of layers of the moisture-resistant film 103A and thatof the moisture-resistant film 103B are the same as shown in FIG. 5B,the thicknesses of the layers also differ since the thicknesses of thefilms differ, with the result that transmission spectral propertiesdiffer. In other words, in this case, by controlling the thickness ofthe moisture-resistant film 103B laminated on the side surfaces of theinfrared cut filter 102 as the organic film, the wavelength range to betransmitted and the wavelength range suppressed to be transmitted(transmission spectral properties) can be controlled.

For example, it is also possible for the inorganic film formed by beinglaminated on the light-incident surface of the organic film to transmita wavelength range photoelectrically converted by the photoelectricconversion device and the inorganic film formed by being laminated onthe side surfaces of the organic film to suppress transmission of thewavelength range photoelectrically converted by the photoelectricconversion device. With such a structure, it is possible to suppress theinfluence of incident light that enters from the side surfaces of theorganic film on the photoelectric conversion and suppress lowering ofimage quality of pickup images Obtained by the image pickup device 101.

More specifically, for example, it is also possible for the inorganicfilm formed by being laminated on the light-incident surface of theorganic film to transmit a wavelength range of visible light and theinorganic film formed by being laminated on the side surfaces of theorganic film to suppress transmission of the wavelength range of visiblelight.

For example, on the moisture-resistant film 103A (upper surface), amultilayer film that transmits visible light having a wavelength of 400nm to 650 nm and removes ultraviolet light having a wavelength of 400 nmor less and near-infrared light having a wavelength of 650 nm to 1200 nmas indicated by the solid line 137 of FIG. 5C is provided. In contrast,on the moisture-resistant film 103B (side surface), a multilayer filmobtained by thinning the thickness of each of the layers of themultilayer film of the moisture-resistant film 103A to about 60% isprovided. Since the principle of the multilayer film is laminatinglayers having thicknesses that are ¼ the wavelengths having differentrefractive indexes and reflecting a desired wavelength band by multipleinterference, the thickness of the multilayer film is proportional tothe wavelength.

In other words, when the multilayer film of the moisture-resistant film103B is thinned to about 60% the moisture-resistant film 103A, forexample, a spectral transmittance property that removes at least lightwithin a wavelength range of 390 nm to 720 nm is obtained as indicatedby the dotted line 138 in FIG. 5C. Accordingly, visible light within thewavelength range of 390 nm to 720 nm that enters the moisture-resistantfilm 103B (side surfaces) cannot be transmitted through the infrared cutfilter 102 as the organic film and is reflected on the surface of themoisture-resistant film 103 as indicated by the arrows 133 and 134 ofFIG. 5A.

Therefore, the amount of visible light that enters from the sidesurfaces of the infrared cut filter 102 and reaches the photoelectricconversion device of the image pickup device 101 is reduced. In otherwords, it becomes possible to reduce ghosts and flares in pickup imagesobtained by the image pickup device 101, that is, lowering of imagequality of pickup images can be suppressed.

<Thickness of Moisture-Resistant Film>

As shown in FIG. 6A, the thickness of the moisture-resistant film 103Aas the inorganic film on the light-incident surface (upper surface) ofthe infrared cut filter 102 as the organic film is represented by A. Inaddition, as shown in FIG. 6B, the thickness of the moisture-resistantfilm 103B as the inorganic film on the side surfaces of the infrared cutfilter 102 as the organic film is represented by B. In addition, asshown in FIG. 6C, a lower limit of the wavelength that is transmittedthrough the moisture-resistant film 103A as the inorganic film on thelight-incident surface (upper surface) of the infrared cut filter 102 asthe organic film is represented by C, and an upper limit thereof isrepresented by D.

In this case, the thickness B of the moisture-resistant film 103B may becalculated by the following expression (1) or (2).

B≈C/D*A   (1)

or

B<C/D*A   (2)

Specifically, a ratio of the thickness of the inorganic film fanned bybeing laminated on the side surfaces of the organic film to thethickness of the inorganic film formed by being laminated on thelight-incident surface of the organic film can be set to be equal to orsmaller than a ratio of the lower limit wavelength of the wavelengthrange that is transmitted through the inorganic film formed by beinglaminated on the light-incident surface of the organic film to the upperlimit wavelength of the wavelength range.

Further, the side surface lamination thickness may be set to be within a10-point width of a ratio obtained by dividing the shortest wavelengthfor transmitting visible light by the shortest wavelength for removinginfrared light, with respect to the upper surface lamination thickness.

For example, when the transmission band is 400 nm to 650 nm and theremaining band is the removal band, with the upper surface laminationthickness being represented by A, the side surface lamination thicknessis set to be about 0.615 A (0.615=400/650) and does not strictly need tobe 0.62 A. The side surface lamination thickness of 0.615 A or less cancut 400 nm or more, so it can be set as extremely as 0.2 A. Moreover,the side surface lamination thickness of 0.6 A can cut 390 nm or more,and the side surface lamination thickness of 0.64 A can cut 420 nm ormore.

<Control of Transmission Wavelength Range of Side Surfaces>

Further, as described above, by changing the thickness of themoisture-resistant film 103B with the thickness of themoisture-resistant film 103A, the wavelength range that is transmittedthrough the side surfaces of the infrared cut filter 102 can be shiftedfrom the wavelength range that is transmitted through the light incidentsurface.

For example, as the thickness of the moisture-resistant film 103B ismade thinner with respect to the thickness of the moisture-resistantfilm 103A, the wavelength range that is transmitted through the sidesurfaces of the infrared cut filter 102 can be shifted more on the shortwavelength side. It is for the purpose of suppressing transmission ofvisible light, the thickness of the moisture-resistant film 103B onlyneeds to be made thinner than that when the upper limit of thewavelength range that is transmitted through the side surfaces of theinfrared cut filter 102 becomes the lower limit of the wavelength rangeof visible light.

Conversely, as the thickness of the moisture-resistant film 103B is madethicker with respect to the thickness of the moisture-resistant film103A, the wavelength range that is transmitted through the side surfacesof the infrared cut filter 102 can be shifted more on the longwavelength side. If it is for the purpose of suppressing transmission ofvisible light, the thickness of the moisture-resistant film 103B onlyneeds to be made thicker than that when the lower limit of thewavelength range that is transmitted through the side surfaces of theinfrared cut filter 102 becomes the upper limit of the wavelength rangeof visible light.

It should be noted that since the spectral transmittance property of themultilayer film has an incident angle dependency, there is strictly aneed to provide the multilayer film while taking into account thepresumable tilt angle of the moisture-resistant film 103B (sidesurfaces) and incident angle of light beams.

<Optical Property Control Based on Number of Layers of Side Surfaces>

It should be noted that it is also possible to control the wavelengthrange for transmission and the wavelength range for suppressingtransmission (transmission spectral property) by controlling the numberof layers of the moisture-resistant film 103B laminated on the sidesurfaces of the infrared cut filter 102 as the organic film as shown inFIG. 7, for example.

In a case where the formation of the moisture-resistant film 103(inorganic film) on the side surfaces of the infrared cut filter 102 asthe organic film and the formation of the moisture-resistant film 103(inorganic film) on the light-incident surface (upper surface) of theinfrared cut filter 102 (including formation of moisture-resistant filmin peripheral section of infrared cut filter 102) are carried out indifferent steps using a mask as will be described later, the number oflayers of the moisture-resistant film 103A on the light-incident surface(upper surface) and that of the moisture-resistant film 103B on the sidesurfaces can be set independently.

When the thickness of the moisture-resistant film 103A and that of themoisture-resistant film 103B are the same (thickness 139) as shown inFIG. 7, if the numbers of layers differ, the thicknesses of the layersalso differ. Therefore, by controlling the number of layers as in thecase of controlling the thickness described above, the wavelength rangeof light that is transmitted through the side surfaces can becontrolled. For example, it is possible to inhibit light of thewavelength range that is transmitted through the light-incident surfaceof the infrared cut filter 102 from being transmitted through the sidesurfaces of the infrared cut filter 102. Therefore, it is possible tosuppress lowering of image quality of pickup images obtained by theimage pickup device 101.

<Thickness Control Example>

It should be noted that the thickness 117 of the moisture-resistant film103 at the portion of the side surface of the infrared, cut filter 102may be made thinner than the thickness 116 thereof at the portion of thelight-incident surface (upper surface) of the infrared cut filter 102and the thickness 118 thereof at the peripheral section of the infraredcut filter 102 as shown in FIG. 8A, or thicker as shown in FIG. 8B.

<Moisture-Resistant Film in Peripheral Section>

It should be noted that although the descriptions have been given thatthe moisture-resistant film 103 is formed by being laminated on thelayer adjacent to the surface of the infrared cut filter 102 opposite tothe light-incident surface (flattening film 111) in the peripheralsection of the infrared cut filter 102 while referring to FIG. 2, themoisture-resistant film 103 may be laminated on a layer lower than thatshown in the figure. In other words, the moisture-resistant film 103(inorganic film) may be formed by being laminated on a layer formed moreon the other side of the light-incident surface than the layer adjacentto the surface of the infrared cut filter 102 opposite to thelight-incident surface (flattening film 111) in the peripheral sectionof the infrared cut filter 102 as the organic film.

There are cases where electrodes for connecting the wiring layer of theorganic-film-attached image pickup device 100 and the outside of theorganic-film-attached image pickup device 100 are formed in theperipheral section of the infrared cut filter 102 as shown in FIG. 9,for example. In the case of the example shown in FIG. 9, an electrode142-1 is formed in the peripheral section of the infrared cut filter 102surrounded by the dotted line 141-1. In addition, an electrode 142-2 isformed in the peripheral section of the infrared cut filter 102surrounded by the dotted line 141-2. In the descriptions below, unlessthere is no need to distinguish the electrodes 142-1 and 142-2 from eachother, the electrodes will simply be referred to as electrodes 142.

In such a case, the peripheral sections of the infrared cut filter 102is etched such that the electrodes 142 are exposed. In other words, themoisture-resistant film 103 is formed by being laminated on a layerformed more on the other side of the light-incident surface (morespecifically, layer on which electrodes 142 are formed) than the layerthat is in contact with the surface of the organic film opposite to thelight-incident surface (flattening film 111).

With such a structure, the moisture-resistant film 103 can be depositedat portions other than the electrodes 142 while the electrodes 142 areexposed, with the result that moisture permeation into the infrared cutfilter 102 can more-positively be suppressed.

It should be noted that the method of exposing the electrodes isarbitrary, Further, also in this case, the organic-film-attached imagepickup device 100 may include the transparent layer 124 formed by beinglaminated on the light-incident surface of the moisture-resistant film103 as in the case of FIGS. 3. The transparent layer 124 is formed of,for example, glass (e.g., quartz) or resin. In addition, the ribs 125may be formed between the moisture-resistant film 103 and thetransparent layer 124 on the side surfaces or in the peripheral sectionof the infrared cut filter 102.

<Multilayer Moisture-Resistant Film>

Further, the moisture-resistant film 103 may be formed as a plurality oflayers.

In other words, a plurality of moisture-resistant films 103 may belaminated. For example, a moisture-resistant film 143 may be formed bybeing laminated on the surface of the infrared cut filter 102 oppositeto the light-incident surface as shown in the example of FIG. 10.

The moisture-resistant film 143 is a protection film (inorganic film)that is formed of an inorganic material and protects the flattening film(hatched portion of figure) as the organic film foamed above the imagepickup device 101 in the figure, The moisture-resistant film 143 is anorganic film similar to the moisture-resistant film 103 described above,protects the flattening film, and suppresses moisture permeation intothe flattening film. In other words, the moisture-resistant film 143 isdeposited in a thickness with which moisture permeation into theflattening film can be sufficiently suppressed.

The moisture-resistant film 143 may have a single-layer structure likethe moisture-resistant film 103 shown in the example of FIG. 2 and thelike or may have a multilayer structure like the moisture-resistant film103 shown in the example of FIG. 5B and the like. In the example of FIG.10, the moisture-resistant film 143 and the moisture-resistant film 103may have the same structure or may have different structures. Moreover,the thicknesses thereof may be the same or may differ.

As shown in FIG. 10, the infrared cut filter and the moisture-resistantfilm 103 are laminated above such a moisture-resistant film 143 in thefigure. In other words, the infrared cut filter 102 is formed betweenthe moisture-resistant film 103 and the moisture-resistant film 143, andall the surfaces of the infrared cut filter 102 are completely sealed bythe moisture-resistant film 103 and the moisture-resistant film 143.Therefore, the moisture-resistant film 143 can additionally suppressmoisture permeation into the infrared cut filter 102.

<Oxygen-Resistant Film>

Heretofore, the moisture-resistant film 103 has been described as anexample of the inorganic film formed of an inorganic material, but thisinorganic film may be any film as long as it is a layer formed as theprotection film that protects the organic film. For example, theinorganic film may be an oxygen-resistant film (oxygen barrier) thatsuppresses oxygen permeation into the organic film as the protection,target, for example. Moreover, for example, the inorganic film may be aprotection film that suppresses permeation of both moistures and oxygen(has both moisture resistance and oxygen resistance). In other words,the inorganic film may include both functions as the moisture-resistantfilm and the oxygen-resistant film.

The organic film like the infrared cut filter 102 has low oxygenresistance and is apt to be deteriorated due to permeation of oxygen(apt to be optically influenced). Therefore, by forming such anoxygen-resistant film (inorganic film) by laminating it on the surfaceof the infrared cut filter 102 including at least the light-incidentsurface and the side surfaces so as to seal the infrared cut filter 102,deterioration of the infrared cut filter (organic film) due to oxygenpermeation can be suppressed.

In other words, the moisture-resistant film 103 as the protection filmof the organic film described above may include not only the performanceof suppressing moisture permeation into the organic film as theprotection target (moisture resistance) but also the performance ofsuppressing oxygen permeation into the organic film as the protectiontarget (oxygen resistance). In this case, the thickness of themoisture-resistant film 103 is desirably a thickness with which asufficient effect as the protection film can be obtained. In addition,the thickness with which sufficient oxygen resistance can be obtained isgenerally larger than that with which sufficient moisture resistance canbe obtained. In other words, in this case, the side surfaces of theinfrared cut filter 102 are tilted by an angle at which the thickness117 of the moisture-resistant film 103 (inorganic film) becomes athickness with which sufficient oxygen resistance can be obtained.Further, by the tilt, the moisture resistant film 103 is formed in athickness with which sufficient oxygen resistance can be obtained.

<Effects>

As described heretofore, in the case of the organic-film-attached imagepickup device 100, the protection performance of the optical filter(organic film) can be improved by covering the optical filter as theorganic film by the inorganic protection film. Moreover, since theinorganic protection film is provided close to image pickup pixels whilebeing provided with the function as the multilayer film optical filterso as to perform spectral correction, ghost flare properties can beimproved.

It should be noted that the principle by which ghost flares are reducedis that normally, when the infrared cut filter as the multilayer film isprovided in an image pickup optical channel, light reflected by an imagepickup device surface reaches the infrared cut filter to be reflectedagain and reaches the image pickup device surface again, lithe imagepickup device and the infrared cut filter are provided apart from eachother, light that has entered the image pickup device the first time islargely deviated in position due to reciprocating reflections, and thisis recognized as ghosts and flares. However, when the same infrared cutfilter is provided close to the image pickup device, the positionaldeviation due to reciprocating reflections becomes a negligible amount(1 pixel or less to about few pixels) to not be recognized as ghosts orflares and is recognized as a blur of a point image.

By changing the spectral transmittance property of the side surfaces ofthe infrared cut filter 102 as the organic film to, for example, aproperty for removing visible light, visible light is transmittedthrough the light-incident surface (upper surface) to be imaged, andghosts and flares due to incident light from the side surfaces can bereduced.

Further, also when laminating the light-incident surface (upper surface)and side surfaces of the infrared cut filter 102 as the organic film atthe same time, the infrared cut wavelength band of the light-incidentsurface (upper surface) is shifted since the thickness of each layer ofthe multilayer film of the inorganic film (moisture-resistant film 103)on the side surfaces becomes proportionally thin with respect to themultilayer film thickness of the light-incident surface (upper surface),and visible light incident components are reflected to be reduced (notcompletely due to ripples but large portion is reflected).

Furthermore, when attaching a glass substrate 271 and the image pickupdevice 101, even when there is an external impact or the like, the ribscan absorb the impact as a buffer. Alternatively, since a crack isstopped by the ribs, the crack does not influence the moisture-resistantfilm. Since the multilayer film optical filter is provided close to theimage pickup pixels while being capable of performing spectralcorrection, red ghost flare properties can be improved. Since there isno glass on the multilayer film of the optical filter, the opticalsystem can be made thin. By the multilayer film, visible light incidentcomponents from side walls are reduced by the reflection.

Heretofore, the descriptions have been made using the infrared cutfilter 102 as an example of the organic film formed of an organicmaterial. However, the organic film to be protected by the inorganicfilm may be any film as long as it is a layer formed of an organicmaterial. Moreover, the shape of the organic film may be any shape aslong as it has the light-incident surface and side surfaces as describedabove. For example, the organic film may be formed only in a part of aneffective pixel area or may be formed in a pixel unit.

<2. Second Embodiment>

<Production Apparatus>

Next, production of the organic-film-attached image pickup device 100 asdescribed above will be described.

As the production method of the organic-film-attached image pickupdevice 100, for example, there is a method of forming a portion of theinorganic film, that is laminated on the light-incident surface of theorganic film, and a portion thereof that is laminated on the sidesurfaces in the same step. There is also a method of forming a portionof the inorganic film, that is laminated on the light-incident surfaceof the organic film, and a portion thereof that is laminated on the sidesurfaces in different steps using a mask, for example. In addition,there is a method of producing the organic-film-attached image pickupdevice 100 by forming an inorganic film or the like by laminating it ona transparent layer formed of glass (e.g., quartz), resin, or the likeand attaching that structure with an image pickup device.

<Production Apparatus in Case of Same Step>

First, the method of forming a portion of the inorganic film, that islaminated on the light-incident surface of the organic film, and aportion thereof that is laminated on the side surfaces in the same stepwill be described.

FIG. 11 is a block diagram showing a main structural example of aproduction apparatus that produces the organic-film-attached imagepickup device 100 (image sensor) to which the present technique isapplied. The production apparatus 200 shown in FIG. 11 includes acontrol section 201 and a production section 202.

The control section 201 includes, for example, a CPU (Central ProcessingUnit), a ROM (Read Only Memory), and a RAM (Random Access Memory),controls respective sections of the production section 202, and carriesout control processing related to the production of theorganic-film-attached image pickup device 100. For example, the CPU ofthe control section 201 executes various types of processing accordingto programs stored in the ROM. The CPU also executes various types ofprocessing according to programs loaded to the RAM from a storagesection 213. The RAM also stores as appropriate data requisite for theCPU to execute the various types of processing.

The production section 202 carries out processing related to theproduction of the organic-film-attached image pickup device 100 undercontrol of the control section 201. The production section 202 includesa photodiode formation section 231, a wiring layer formation section232, a light shield film formation section 233, a flattening filmformation section 234, a filter formation section 235, a collective lensformation section 236, an organic film formation section 241, an organicfilm processing section 242, an inorganic film formation section 243,and a dicing section 244.

The photodiode formation section 231 forms a photodiode (photoelectricconversion device) on a silicon substrate. The wiring layer formationsection 232 forms a wiring layer (not shown) on a surface of the siliconsubstrate opposite to a light-incident surface (lower side of FIG. 1).The light shield film formation section 233 forms a light shield film.The flattening film formation section 234 forms a flattening film. Thefilter formation section 235 forms a color filter. The collective lensformation section 236 forms a collective lens.

The organic film formation section 241 forms an organic film The organicfilm processing section 242 processes the side surfaces of the organicfilm formed by the organic film formation section 241 and causes theside surfaces to be tilted by an angle at which the thickness of theinorganic film formed by being laminated on the side surfaces becomes apredetermined thickness.

The inorganic film formation section 243 forms an inorganic film by themethod of, for example, CVD or vapor deposition to seal the organicfilm. At this time, the inorganic film formation section 243 forms theinorganic film formed by being laminated on both the light-incidentsurface and side surfaces of the organic film in the same step.

The dicing section 244 dices the organic-film-attached image pickupdevice 100 into individual pieces.

The photodiode formation section 231 to the dicing section 244 arecontrolled by the control section 201 and carry out processing of thesteps for producing the organic-film-attached image pickup device 100 aswill be described later.

Further, the production apparatus 200 includes an input section 211, anoutput section 212, a storage section 213, a communication section 214,and a drive 215.

The input section 211 is constituted of a keyboard, a mouse, a touchpanel, an external input terminal, and the like, accepts inputs of userinstructions and external information, and supplies them to the controlsection 201. The output section 212 is constituted of a display such asa CRT (Cathode Ray Tube) display and an LCD (Liquid Crystal Display), aspeaker, an external output terminal, and the like and outputs varioustypes of information supplied from the control section 201 as images,audios, analog signals, and digital data.

The storage section 213 includes an arbitrary storage medium such as aflash memory, an SSD (Solid State Drive), and a hard disk, storesinformation supplied from the control section 201, and reads out andsupplies the stored information according to requests from the controlsection 201.

The communication section 214 is constituted of, for example, aninterface or modem for a wired LAN (Local Area Network) and a wirelessLAN and carries out communication processing with an external apparatusvia a network including the Internet. For example, the communicationsection 214 transmits information supplied from the control section 201to a communication counterpart or supplies information received from thecommunication counterpart to the control section 201.

The drive 215 is connected to the control section 201 as necessary.Further, a removable medium 221 such as a magnetic disk, an opticaldisc, a magneto-optical disc, and a semiconductor memory is loaded intothe drive 215 as appropriate. Then, computer programs read out from theremovable medium 221 via the drive 215 are installed in the storagesection 213 as necessary.

<Flow of Production Processing in Case of Same Step>

Referring to the flowchart of FIG. 12, an example of the flow ofproduction processing for producing the organic-film-attached imagepickup device 100, that is executed by the production apparatus 200 inthis case will be described.

As the production processing is started, the photodiode formationsection 231 forms, for each pixel, a photodiode (photoelectricconversion device) on a silicon substrate supplied from outside in StepS201 under control of the control section 201.

In Step S202, the wiring layer formation section 232 forms, undercontrol of the control section 201, a wiring layer (not shown) includinga multilayer wiring that uses metal such as copper and aluminum whilelaminating it on a surface of the silicon substrate opposite to thelight-incident surface on which the photodiode has been formed (lowerside in FIG. 1).

In Step S203, the light shield film formation section 233 forms a lightshield film at a pixel circumferential section of the silicon substrateunder control of the control section 201.

In Step S204, the flattening film formation section 234 forms aflattening film while laminating it on the silicon substrate on whichthe light shield film has been formed under control of the controlsection 201.

In Step S205, the filter formation section 235 forms a color filterwhile laminating it on the flattening film under control of the controlsection 201.

In Step S206, the collective lens formation section 236 forms acollective lens while laminating it on the color filter under control ofthe control section 201.

As described above, the structure of the image pickup device 101 isformed as shown in FIG. 13A. It should be noted that the structure ofthe image pickup device 101 is arbitrary, and the production methodtherefor is also not limited to the example described above.

In Step S207, the organic film formation section 241 forms an organicfilm (infrared cut filter 102) on the light-incident surface of theimage pickup device 101 by a spin coat method or the like under controlof the control section 201 (FIG. 13B),

After curing of the organic film, in Step S208, the organic filmprocessing section 242 processes the organic film (infrared cut filter102) formed in Step S207 by etching or the like under control of thecontrol section 201, and forms an organic film for each image pickupdevice (infrared cut filters 102A to 102C) in which the side surfacesare tilted by a predetermined angle α (FIG. 13C).

In Step S209, the inorganic film formation section 243 forms aninorganic film (moisture-resistant film 103) in a thickness with whichsufficient moisture resistance can be obtained by the method of CVDvapor deposition, or the like from the light-incident surface side ofthe organic film, so as to seal the organic film for each image pickupdevice (infrared cut filters 102A to 102C) generated by the processingof Steps S207 and S208 under control of the control section 201 (FIG.13D).

In other words, in this step, the inorganic film formation section 243forms the inorganic film (moisture-resistant film 103) on both thelight-incident surface and side surfaces of the organic films (infraredcut filters 102A to 102C) without using a mask

The inorganic film (moisture-resistant film 103) may either have asingle-layer structure or a multilayer structure as described in thefirst embodiment. Moreover, as described above with reference to FIGS. 5to 7, when controlling the transmission wavelength range of the sidesurfaces of the organic film (infrared cut filter 102), the thickness ofthe portion laminated on the side surfaces of the organic film (infraredcut filter 102) is controlled as described above in the firstembodiment.

In Step S210, the dicing section 244 dices the structure produced asdescribed above into individual organic-film-attached image pickupdevices (organic-film-attached image pickup devices 100A to 100C) undercontrol of the control section 201 (FIG. 13E).

Upon ending the processing of Step S210, the individualorganic-film-attached image pickup devices are supplied to an externalapparatus of the production apparatus 200, and the production processingis ended.

By executing the production processing as described above, theproduction apparatus 200 can generate the organic-film-attached imagepickup device 100 (FIG. 1) to which the present technique is applied. Inother words, by performing the production as described above, the layersof the organic film can be positively sealed by the inorganic film, andprotection performance of the organic film can be improved.

<Production Apparatus in Case of Separate Steps>

Next, the method of forming a portion of the inorganic film laminated onthe light-incident surface of the organic film and a portion thereoflaminated on the side surfaces in different steps will be described.

FIG. 14 is a block diagram showing a main structural example of aproduction apparatus that produces the organic-film-attached imagepickup device 100 (image sensor) to which the present technique isapplied. In FIG. 14, the production apparatus 200 basically has astructure similar to that of the case shown in FIG. 11.

It should be noted that in the case of FIG. 14, an upper-surfaceinorganic film formation section 251 and a side-surface inorganic filmformation section 252 are provided in place of the inorganic filmformation section 243 of the production section 202 shown in FIG. 11.

The upper-surface inorganic film formation section 251 forms aninorganic film only on the Light-incident surface (upper surface) of theorganic film (infrared cut filter 102) using a mask.

In addition, the side-surface inorganic film formation section 252 formsan inorganic film only on the side surfaces of the organic film(infrared cut filter 102) using a mask.

In other words, the upper-surface inorganic film formation section 251and the side-surface inorganic film formation section 252 form theinorganic films laminated on the light-incident surface and sidesurfaces of the organic film in different steps.

Other structures are the same as those of FIG. 11. The photodiodeformation section 231 to the dicing section 244, the upper-surfaceinorganic film formation section 251, and the side-surface inorganicfilm formation section 252 cavy out processing of the steps forproducing the organic-film-attached image pickup device 100 as will bedescribed later under control of the control section 201.

<Flow of Production Processing in Case of Separate Steps>

Referring to the flowchart of FIG. 15, an example of the flow ofproduction. processing for producing the organic-film-attached imagepickup device 100, that is executed by the production apparatus 200 inthis case will be described.

The processing of Steps S231 to S238 in the case of FIG. 15 are executedsimilar to the processing of Steps S201 to S208 of FIG. 12. Therefore,for example, the image pickup device 101 is produced by the processingof Steps S231 to S236 as shown in FIG. 16A, the organic films is formedby the processing of Step 237 as shown in FIG. 16B, and the organic filmfor each image pickup device (infrared cut filters 102A to 102C), thathas side surfaces tilted by a predetermined angle α, is formed by theprocessing of Step S238 as shown in FIG. 16C.

In Step S239, the upper-surface inorganic film formation section 251masks the side surfaces of the organic films and forms inorganic films(moisture-resistant films 103A to 103E) each in a thickness with whichsufficient moisture resistance can be obtained by the method of CVD,vapor deposition, or the like such that the inorganic films arelaminated on the light-incident surfaces (upper surfaces) of the organicfilms and the peripheral sections of the organic films under control ofthe control section 201 (FIG. 16D).

The inorganic film (moisture-resistant film 103) may either have asingle-layer structure or a multilayer structure as described in thefirst embodiment, it should be noted that after depositing the inorganicfilms, the mask on the side surfaces of the organic films is removed.

In Step S240, the side-surface inorganic film formation section 252masks the light-incident surfaces (upper surfaces) of the organic filmsand the peripheral sections of the organic films and forms inorganicfilms (moisture-resistant films 103F to 103J) each in a thickness withwhich sufficient moisture resistance can be obtained by the method ofCVD, vapor deposition, or the like such that the inorganic films arelaminated on the side surfaces of the organic films under control of thecontrol section 201 (FIG. 16E).

The inorganic film (moisture-resistant film 103) may either have asingle-layer structure or a multilayer structure as described in thefirst embodiment. It should be noted that after depositing the inorganicfilms, the mask on the side surfaces of the organic films is removed.Moreover, as described above with reference to FIGS. 5 to 7, whencontrolling the transmission wavelength range of the side surfaces ofthe organic film (infrared cut filter 102), the thickness or the numberof layers of the portion laminated on the side surfaces of the organicfilm (infrared cut filter 102) is controlled as described above in thefirst embodiment.

It should be noted that after depositing the inorganic films, masks onthe light-incident surfaces (upper surfaces) of the organic films andthe peripheral sections of the organic films are removed.

In Step S241, the dicing section 244 dices the structure produced asdescribed above into individual organic-film-attached image pickupdevices (organic-film-attached image pickup devices 100A to 100C) as inthe case of Step S210 under control of the control section 201 (FIG.16F).

By executing the production processing as described above, theproduction apparatus 200 can generate the organic-film-attached imagepickup device 100 (FIG. 1) to which the present technique is applied. Inother words, by performing the production as described above, the layersof the organic film can he positively sealed by the inorganic film, andprotection performance of the organic film can he improved.

It should be noted that by forming the portions of the inorganic film,that are laminated on the light-incident surface and peripheral sectionof the organic film, and the portion thereof laminated on the sidesurfaces in different steps as in this example, the number of layers ofthe inorganic film at each portion can be set independently as describedin the first embodiment. For example, the number of layers of theinorganic film laminated on the side surfaces of the organic film can bedifferentiated from the number of layers of the inorganic film laminatedon the light-incident surface and peripheral section of the organicfilm. Therefore, the spectral transmittance property of the inorganicfilm laminated on the side surfaces of the organic film can be set morefreely.

<Production Apparatus when Attaching Transparent Layer and Image PickupDevice>

Next, a method of attaching the transparent layer and the image pickupdevice will be described.

FIG. 17 a block diagram showing a main structural example of theproduction apparatus that produces the organic-film-attached imagepickup device 100 (image sensor) (e.g., FIGS. 3) to which the presenttechnique is applied. Also in the case of FIG. 17, the productionapparatus 200 basically has a structure similar to that of FIG. 11.

It should be noted that in the case of FIG. 17, a rib formation section261, an inorganic film formation section 262, an organic film formationsection 263, an adhesive application section 264, a bonding section 265,a wiring formation section 266, and a dicing section 267 are provided inplace of the organic film formation section 241 to the dicing section244 of the production section 202 shown in FIG. 11.

The rib formation section 261 forms ribs 125 between themoisture-resistant film 103 and the transparent layer 124. The inorganicfilm formation section 262 forms an inorganic film formed of aninorganic material as the moisture-resistant film 103 that seals theinfrared cut filter 102 as the organic film. The organic film formationsection 263 forms the infrared cut filter 102 as the organic film formedof an organic material. The adhesive application section 264 applies anadhesive for bonding the transparent layer 124 and the image pickupdevice 101 onto the transparent layer 124 on which the ribs 125, themoisture-resistant film 103, the infrared cut filter 102, and the likeare formed. The bonding section 265 bonds the surface of the transparentlayer 124 onto which the adhesive has been applied and thelight-incident surface of the image pickup device 101. The wiringformation section 266 forms terminals, through holes, and the like. Thedicing section 267 dices the organic-film-attached image pickup device100 into individual image pickup devices.

The photodiode formation section 231 to the dicing section 267 carry outprocessing of the stew for producing the organic-film-attached imagepickup device 100 as will be described later under control of thecontrol section 201.

<Flow of Production Processing in Case of Bonding Transparent Layer andImage Pickup Device>

Referring to the flowchart of FIG. 18, an example of the flow ofproduction processing for producing the organic-film-attached imagepickup device 100, that is executed by the production apparatus 200 inthis case will be described.

The processing of Steps S261 to S266 in the case of FIG. 18 are executedsimilar to the processing of Steps S201 to S206 of FIG. 12.

In Step S267, the rib formation section 261 forms the ribs 125 on asportion of the glass substrate 271 where the organic film (infrared cutfilter 102) is not to be formed as shown in FIG. 19A by lithographyunder control of the control section 201 (e.g., ribs 125A and 125B inFIG. 19B). At this time, the rib formation section 261 causes the sidesurfaces of the ribs 125 to be tilted by a predetermined angle α suchthat the side surfaces of the organic film (infrared cut filter 102) aretilted by the predetermined angle α.

In Step S268, the inorganic film formation section 262 forms theinorganic film (moisture resistant film 103) on the glass substrate 271on which the ribs 125 are formed in a thickness with which sufficientmoisture resistance can be obtained so as to seal the organic film bythe method of CVD, vapor deposition, or the like under control of thecontrol section 201 (FIG. 19C). The inorganic film (moisture-resistantfilm 103) may either have a single-layer structure or a multilayerstructure as described, in the first embodiment. Moreover, as describedabove with reference to FIGS. 5 to 7, when controlling the transmissionwavelength range of the side surfaces of the organic film (infrared cutfilter 102), the thickness or the number of layers of the portionlaminated on the side surfaces of the organic film (infrared cut filter102) is controlled as described above in the first embodiment.

In Step S269, the organic film formation section 263 forms, by themethod of spin coat or the like, the organic film (infrared cut filter102) on the glass substrate 271 on which the ribs 125 and themoisture-resistant film 103 are formed under control of the controlsection 201. As described above, since the side surfaces of the ribs125A and 125B are tilted by the predetermined angle α, the side surfacesof the organic film (infrared cut filter 102) formed by being laminatedon the ribs 125 are also tilted by the predetermined angle α (FIG. 19D).

Then, as described above, the glass substrate 271 on which the ribs 125,the inorganic film (moisture resistant film 103), and the organic film(infrared cut filter 102) are formed is bonded with the image pickupdevice 101 formed by the processing of Steps S261 to S266 (FIG. 19E).

Therefore, when the organic film is cured, the adhesive applicationsection 264 applies an adhesive 273 onto the surface of the organic film(infrared cut filter 102) (upper side of FIG. 19D) under control of thecontrol section 201 in Step S270 (FIG. 20A).

In Step S271, the bonding section 265 positions and bonds the surface ofthe Mass substrate 271 onto which the adhesive has been applied and thelight-incident surface of the image pickup device 101 under control ofthe control section 201 (FIGS. 20B and 20C).

After the adhesive is cured and the glass substrate 271 and the imagepickup device 101 are integrated (FIG. 201D), the wiring formationsection 266 forms terminals and through holes or polishes the hacksurface of the image pickup device 101 under control of the controlsection 201 in Step S272.

In Step S273, the dicing section 267 dices the structure produced asdescribed above into individual organic-film-attached image pickupdevices (organic-film-attached image pickup devices 100A to 100C) undercontrol of the control section 201 (FIG. 20E).

Upon ending the processing of Step S273, the individualorganic-film-attached image pickup devices are supplied to an externalapparatus of the production apparatus 200, and the production processingis ended.

By executing the production processing as described above, theproduction apparatus 200 can generate the organic-film-attached imagepickup device 100 (FIGS. 3) to which the present technique is applied.In other words, by performing the production as described above, thelayers of the organic film can be positively sealed by the inorganicfilm, and protection performance of the organic film can be improved.

It should be noted that also when bonding the glass substrate and theimage pickup device, the inorganic film laminated on the light-incidentsurface or peripheral section of the organic film and the inorganic filmlaminated on the side surfaces of the organic film may either be formedin the same step or different steps.

Moreover, it is possible to remove only the glass substrate 271 afterbonding the glass substrate 271 to the image pickup device 101 asdescribed above. With such a structure, the height of theorganic-film-attached image pickup device 100 can be lowered.

<3. Third Embodiment>

<Image Pickup Apparatus>

The organic-film-attached image pickup device 100 (image sensor)produced by applying the present technique can be applied to devicessuch as an image pickup apparatus. In other words, the present techniquecan be implemented not only as the image pickup device but also as adevice that uses the image pickup device (e.g., image pickup apparatus).

FIG. 21 is a block diagram showing a main structural example of theimage pickup apparatus. The image pickup apparatus 600 shown in FIG. 21is an apparatus that picks up an image of an object and outputs theimage of the object as electrical signals.

As shown in FIG. 21, the image pickup apparatus 600 includes an opticalsection 611, a CMOS sensor 612, an A/D converter 613, an operationsection 614, a control section 615, an image processing section 616, adisplay section 617, a codec processing section 618, and a recordingsection 619.

The optical section 611 is constituted of a lens that adjusts a focalpoint with respect to the object and collects light from the focusedposition, an aperture that adjusts an exposure, a shutter that controlsan image pickup timing, and the like. The optical section 611 transmitslight from the object (incident light) and supplies the light to theCMOS sensor 612.

The CMOS sensor 612 photoelectrically converts the incident light andsupplies a signal for each pixel (pixel signal) to the A/D converter613.

The A/D converter 613 converts the pixel signals supplied from the CMOSsensor 612 at predetermined timings into digital data (image data) andsuccessively supplies the data to the image processing section 616 atpredetermined timings.

The operation section 614 is constituted of, for example, a jog dial(registered trademark), keys, buttons, and a touch panel, receivesoperation inputs from a user, and supplies signals corresponding to theoperation inputs to the control section 615.

The control section 615 controls drive of the optical section 611, theCMOS sensor 612, the A/D converter 613, the image processing section616, the display section 617, the codec processing section 618, and therecording section 619 based on the signals corresponding to theoperation inputs of the user input from the operation section 614 andcauses the respective sections to carry out processing related to theimage pickup.

The image processing section 616 carries out, on the image data suppliedfrom the A/D converter 613, various types of image processing such asmixed color correction, black level correction, white balanceadjustment, demosaic processing, matrix processing, gamma processing,and YC conversion. The image processing section 616 supplies the imagedata subjected to the image processing to the display section 617 andthe codec processing section 618.

The display section 617 is structured as a liquid crystal display, forexample, and displays an image of the object based on the image datasupplied from the image processing section 616.

The codec processing section 618 carries out encoding processing of apredetermined system on the image data supplied from the imageprocessing section 616 and supplies the obtained encoded data to therecording section 619.

The recording section 619 records the encoded data from the codecprocessing section 618. The encoded data recorded in the recordingsection 619 is read out and decoded by the image processing section 616as necessary. The image data obtained by the decoding processing issupplied to the display section 617 so that a corresponding image isdisplayed.

The present technique described above is applied to the CMOS sensor 612of the image pickup apparatus 600 as described above. In other words,the organic-film-attached image pickup device 100 to which the presenttechnique is applied is used as the CMOS sensor 612. Therefore, the CMOSsensor 612 includes a photoelectric conversion device thatphotoelectrically converts incident light that has entered from outside,an organic film that is formed by being laminated on a light-incidentsurface side of the photoelectric conversion device, and an inorganicfilm that is formed by being laminated on a light-incident surface Findside surfaces of the organic film and seals the organic film, the sidesurfaces of the organic film being tilted by an angle at which athickness of the inorganic film that is formed by being laminated on theside surfaces becomes a predetermined thickness. Therefore, the CMOSsensor 612 can improve protection performance of the organic film andalso improve reliability. With the reliability of the image pickupapparatus 600 being improved, aim image of higher image quality can beObtained by the image pickup apparatus 600 picking up an image of anobject (lowering of image quality of pickup image can be suppressed).

It should be noted that the image pickup apparatus to which the presenttechnique is applied is not limited to the structure described above,and other structures may be used instead. For example, not only adigital still camera and a video camera but also an informationprocessing apparatus including an image pickup function, such as acellular phone, a smartphone, a tablet device, and a personal computermay be used. Moreover, a cameral module that is mounted on otherinformation processing apparatuses to be used (or mounted as built-indevice) may also be used.

The series of processing described above may be executed either byhardware or software. When the series of processing described above isexecuted by software, a program constituting the software is installedfrom a network or a recording medium.

The recording medium is constituted of the removable medium 221 on whicha program is recorded, that is different from the apparatus body and isdistributed for delivering the program to a user, as shown in FIGS. 11,14, and 17, for example. The removable medium 221 includes a magneticdisk (including flexible disk) and an optical disc (including CD-ROM andDVD). Further, a magneto-optical disc (including MD (Mini Disc)), asemiconductor memory, and the like are also included. Furthermore, it isalso possible for the recording medium described above to be constitutedof not only the removable medium 221 as described above but also a ROMin which a program is recorded, a hard disk included in the storagesection 213, and the like that are delivered to users while beingbuilt-in in the apparatus body in advance.

It should be noted that the program executed by the computer may be aprogram that carries out the processing in time series in the orderdescribed in the specification or a program that carries out theprocessing in parallel or at necessary timings when invoked or the like.

Moreover, in the specification, the steps describing the programrecorded onto a recording medium include not only processing that arecarried out in time series in the stated order but also processing thatare executed in parallel or individually and do not always need to beprocessed in time series.

Further, the structure described as a single apparatus (or processingsection) in the descriptions above may he divided and structured as aplurality of apparatuses (or processing sections). Conversely, thestructure described as the plurality of apparatuses (or processingsections) may he integrally structured as a single apparatus (orprocessing section). Furthermore, structures other than that describedabove may of course be added to the structure of each apparatus (or eachprocessing section). In addition, as long as the structures andoperations as the entire system are substantially the same, a part of astructure of a certain apparatus (or processing section) may heincorporated into the structure of another apparatus (or anotherprocessing section),

Heretofore, the favorable embodiments of the present disclosure havebeen specifically described with reference to the attached drawings.However, the technical range of the present disclosure is not limited tothe examples above. It is apparent that those having common knowledge inthe technical field to which the present disclosure pertains are capableof attaining various modified examples and correction examples withinthe range of the technical idea described in the scope of claims, and itgoes without saying that those are also regarded as pertaining to thetechnical range of the present disclosure.

For example, the present technique may take a cloud computing structurethat assigns one function to a plurality of apparatuses via a networkfor them to process in cooperation with one another.

Moreover, the steps described in the flowchart described above can beshared and executed by the plurality of apparatuses in addition toexecuting them by a single apparatus.

Further, when a plurality of processing is included in a single step,the plurality of processing included in that single step may be sharedand executed by the plurality of apparatuses in addition to executingthem by a single apparatus.

Heretofore, the image pickup device has been exemplified in describingthe present technique. However, the present technique is not limited tothe image pickup device and is also applicable to any semiconductordevice.

It should be noted that the present technique may also take thefollowing structures,

-   -   (1) An image pickup device, including:        -   a photoelectric conversion device that photoelectrically            converts incident light that has entered from outside;        -   an organic film that is formed by being laminated on a            light-incident surface side of the photoelectric conversion            device; and        -   an inorganic film that is formed by being laminated on a            light-incident surface and side surfaces of the organic film            and seals the organic film,        -   the side surfaces of the organic film being tilted by an            angle at which a thickness of the inorganic film that is            formed by being laminated on the side surfaces becomes a            predetermined thickness.    -   (2) The image pickup device according to any one of (1) and (3)        to (13), in which:        -   the inorganic film is a protection film that suppresses            permeation of moisture or oxygen, or both of them; and        -   the side surfaces of the organic film are tilted by an angle            at which the thickness of the inorganic film that is formed            by being laminated on the side surfaces becomes a thickness            with which a sufficient effect as the protection film can be            obtained.    -   (3) The image pickup device according to any one of (1), (2),        and (4) to (13),        -   in which the inorganic film is farther formed by being            laminated on a layer that is in contact with a surface of            the organic film opposite to the light-incident surface or a            layer that is formed more on the opposite side of the            light-incident surface than the layer that is in contact            with the surface of the organic film opposite to the            light-incident surface, in a peripheral section of the            organic film.    -   (4) The image pickup device according to any one of (1) to (3)        and (5) to (13), further including        -   ribs that are formed by being laminated on the            light-incident surface of the inorganic film,    -   (5) The image pickup device according to any one of (1) to (4)        and (6) to (13), further including        -   a transparent layer that is formed of glass or resin and            formed by being laminated on the light-incident surface of            the inorganic film and the ribs.    -   (6) The image pickup device according to any one of (1) to (5)        and (7) to (13),        -   in which the inorganic film is further formed by being            laminated on a surface of the organic film opposite to the            light-incident surface.    -   (7) The image pickup device according to any one of (1) to (6)        and (8) to (13), in which:        -   the inorganic film is formed such that a plurality of layers            having different refractive indexes are structured; and        -   the side surfaces of the organic film are tilted by an angle            at which the thickness of the inorganic film that is formed            by being laminated on the side surfaces becomes a thickness            that transmits a predetermined wavelength range of the            incident light or a thickness that suppresses transmission            of the predetermined wavelength range of the incident light.    -   (8) The image pickup device according to any one of (1) to (7)        and (9) to (13),        -   in which transmission wavelength characteristics of the            inorganic film that is formed by being laminated on the            light-incident surface of the organic film differ from            transmission wavelength characteristics of the inorganic            film that is formed by being laminated on the side surfaces            of the organic film.    -   (9) The image pickup device according to any one of (1) to        and (10) to (13), in which:        -   the inorganic film that is formed by being laminated on the            light-incident surface of the organic film transmits a            wavelength range that is photoelectrically converted by the            photoelectric conversion device; and        -   the inorganic film that is formed by being laminated on the            side surfaces of the organic film suppresses transmission of            the wavelength range that is photoelectrically converted by            the photoelectric conversion device.    -   (10) The image pickup device according to any one of (1) to (9)        and (11) to (13), in which:        -   the inorganic film that is formed by being laminated on the            light-incident surface of the organic film transmits a            wavelength range of visible light; and        -   the inorganic film that is formed by being laminated on the            side surfaces of the organic film suppresses transmission of            the wavelength range of visible light.    -   (11) The image pickup device according to any one of (1) to        (10), (12), and (13),        -   in which the thickness of the inorganic film that is formed            by being laminated on the light-incident surface of the            organic film and the thickness of the inorganic film that is            formed by being laminated on the side surfaces of the            organic film differ.    -   (12) The image pickup device according to any one of (1) to (11)        and (13),        -   in which a ratio of the thickness oldie inorganic film that            is formed by being laminated on the side surfaces of the            organic film to the thickness of the inorganic film that is            formed by being laminated on the light-incident surface of            the organic film is equal to or smaller than a ratio of a            lower limit of the wavelength range transmitted through the            inorganic film that is formed by being laminated on the            light-incident surface of the organic film to an upper limit            of the wavelength range.    -   (13) The image pickup device according to any one of (1) to        (12),        -   in which the number of layers of the inorganic film that is            formed by being laminated on the light-incident surface of            the organic film differs from the number of layers of the            inorganic film that is formed by being laminated on the side            surfaces of the organic film.    -   (14) An image pickup apparatus, including:        -   image pickup device including            -   a photoelectric conversion device that photoelectrically                converts incident light that has entered from outside,            -   an organic film that is formed by being laminated on a                light-incident surface side of the photoelectric                conversion device, and            -   an inorganic film that is formed by being laminated on a                light-incident surface and side surfaces of the organic                film and seals the organic film,            -   the side surfaces of the organic film being tilted by an                angle at which a thickness of the inorganic film that is                formed by being laminated on the side surfaces becomes a                predetermined thickness; and        -   an image processing section that performs image processing            on pickup image data obtained by the image pickup device.    -   (15) A production apparatus that produces an image pickup        device, including:        -   a photoelectric conversion device formation section that            forms a photoelectric conversion device that            photoelectrically converts incident light that enters from            outside;        -   an organic film formation section that forms an organic film            by laminating it on a light-incident surface side of the            photoelectric conversion device;        -   an organic film processing section that processes the            organic film formed by the organic film formation section            while imparting, to side surfaces of the organic film, a            tilt by an angle at which a thickness of the inorganic film            that is formed by being laminated on the side surfaces            becomes a predetermined thickness; and        -   an inorganic film formation section that forms an inorganic            film that seals the organic film by laminating it on a            light-incident surface and side surfaces of the organic            film.    -   (16) The production apparatus according to (15) or (17),        -   in which the inorganic film formation section forms the            inorganic film laminated on the light-incident surface of            the organic film and the inorganic film laminated on the            side surfaces of the organic film in the same step.    -   (17) The production apparatus according to (15) or (16),        -   in which the inorganic film formation section forms the            inorganic film laminated on the light-incident surface of            the organic film and the inorganic film laminated on the            side surfaces of the organic film in different steps.    -   (18) A production method for a production apparatus that        produces an image pickup device, including:        -   forming a photoelectric conversion device that            photoelectrically converts incident light that enters from            outside;        -   forming an organic film by laminating it on a light-incident            surface side of the photoelectric conversion device;        -   processing the formed organic film while imparting, to side            surfaces of the organic film, a tilt by an angle at which a            thickness of the inorganic film that is formed by being            laminated on the side surfaces becomes a predetermined            thickness; and        -   forming an inorganic film that seals the organic film by            laminating it on a light-incident surface and side surfaces            of the organic film.    -   (19) A production apparatus that produces an image pickup        device, including:        -   an image pickup device formation section that forms an image            pickup device that photoelectrically converts incident light            that enters from outside;        -   a rib formation section that forms ribs on a transparent            layer formed of glass or resin;        -   an inorganic film formation section that forms an inorganic            film by laminating it on a surface of the transparent layer            on which the ribs are formed by the rib formation section;        -   an organic film formation section that forms an organic film            by laminating it on the inorganic film formed by being            laminated on the transparent layer by the inorganic film            formation section; and        -   a bonding section that bonds the organic film formed by            being laminated on the transparent layer by the organic film            formation section and a fight-incident surface of the image            pickup device formed by the image pickup device formation            section.    -   (20) A production method for a production apparatus that        produces an image pickup device, including:        -   forming an image pickup device that photoelectrically            converts incident light that enters from outside;        -   forming ribs on a transparent layer formed of glass or            resin;        -   forming an inorganic film by laminating it on a surface of            the transparent layer on which the ribs are formed;        -   forming an organic film by laminating it on the inorganic            film formed by being laminated on the transparent layer; and        -   bonding the organic film formed by being laminated on the            transparent layer and a light-incident surface of the formed            image pickup device.

DESCRIPTION OF REFERENCE NUMERALS

-   100 organic-film-attached image pickup device-   101 image pickup device-   102 infrared cut filter-   103 moisture-resistant film-   111 flattening film-   124 transparent layer-   125 ribs-   142 electrode-   143 moisture-resistant film-   200 production apparatus-   201 control section-   202 production section-   231 photodiode formation section-   232 wiring layer formation section-   233 light shield film formation section-   234 flattening film formation section-   235 filter formation section-   236 collective lens formation section-   241 organic film formation section-   242 organic film processing section-   243 inorganic film formation section-   244 dicing section-   251 upper-surface inorganic film formation section-   252 side-surface inorganic film formation section-   261 rib formation section-   262 inorganic film formation section-   263 organic film formation section-   264 adhesive application section-   265 bonding section-   266 wiring formation section-   267 dicing section-   600 image pickup apparatus-   612 CMOS sensor

1. An image pickup device, comprising: a photoelectric conversion devicethat photoelectrically converts incident light that has entered fromoutside; an organic film that is formed by being laminated on alight-incident surface side of the photoelectric conversion device; andan inorganic film that is formed by being laminated on a light-incidentsurface and side surfaces of the organic film and seals the organicfilm, the side surfaces of the organic film being tilted by an angle atwhich a thickness of the inorganic film that is formed by beinglaminated on the side surfaces becomes a predetermined thickness.
 2. Theimage pickup device according to claim 1, wherein: the inorganic film isa protection film that suppresses permeation of moisture or oxygen, orboth of them; and the side surfaces of the organic film are tilted by anangle at which the thickness of the inorganic film that is formed bybeing laminated on the side surfaces becomes a thickness with which asufficient effect as the protection film can be obtained.
 3. The imagepickup device according to claim 2, wherein the inorganic film isfurther formed by being laminated on a layer that is in contact with asurface of the organic film opposite to the light-incident surface or alayer that is formed more on the opposite side of the light-incidentsurface than the layer that is in contact with the surface of theorganic film opposite to the light-incident surface, in a peripheralsection of the organic film.
 4. The image pickup device according toclaim 3, further comprising ribs that are formed by being laminated onthe light-incident surface of the inorganic film.
 5. The image pickupdevice according to claim 4, further comprising a transparent layer thatis formed of glass or resin and formed by being laminated on thelight-incident surface of the inorganic film and the ribs.
 6. The imagepickup device according to claim 1, wherein the inorganic film isfurther formed by being laminated on a surface of the organic filmopposite to the light-incident surface.
 7. The image pickup deviceaccording to claim 1, wherein: the inorganic film is formed such that aplurality of layers having different refractive indexes are structured;and the side surfaces of the organic film are tilted by an angle atwhich the thickness of the inorganic film that is formed by beinglaminated on the side surfaces becomes a thickness that transmits apredetermined wavelength range of the incident light or a thickness thatsuppresses transmission of the predetermined wavelength range ofincident light.
 8. The image pickup device according to claim 7, whereintransmission wavelength characteristics of the inorganic film that isformed by being laminated on the light-incident surface of the organicfilm differ from transmission wavelength characteristics of theinorganic film that is formed by being laminated on the side surfaces ofthe organic film.
 9. The image pickup device according to claim 8,wherein: the inorganic film that is formed by being laminated on thelight-incident surface of the organic film transmits a wavelength rangethat is photoelectrically converted by the photoelectric conversiondevice; and the inorganic that is formed by being laminated On the sidesurfaces of the organic film suppresses transmission of the wavelengthrange that is photoelectrically converted by the photoelectricconversion device.
 10. The image pickup device according to claim 8,wherein: the inorganic film that is formed by being laminated on thelight-incident surface of the organic film transmits a wavelength rangeof visible light; and the inorganic film that is formed by beinglaminated on the side surfaces of the organic film suppressestransmission of the wavelength range of visible light.
 11. The imagepickup device according to claim 7, wherein the thickness of theinorganic film that is formed by being laminated on the light-incidentsurface of the organic film and the thickness of the inorganic film thatis formed by being laminated on the side surfaces of the organic filmdiffer.
 12. The image pickup device according to claim 11, wherein aratio of the thickness of the inorganic film that is formed by beinglaminated on the side surfaces of the organic film to the thickness ofthe inorganic film that is formed by being laminated on thelight-incident surface of the organic film is equal to or smaller than aratio of a lower limit of the wavelength range transmitted through theinorganic film that is formed by being laminated on the light-incidentsurface of the organic film to an upper limit of the wavelength range.13. The image pickup device according to claim 7, wherein the number oflayers of the inorganic film that is formed by being laminated on thelight-incident surface or the organic film differs from the number oflayers of the inorganic film that is formed by being laminated on theside surfaces of the organic film.
 14. An image pickup apparatus,comprising: an image pickup device including a photoelectric conversiondevice that photoelectrically converts incident light that has enteredfrom outside, an organic film that is formed by being laminated on alight-incident surface side of the photoelectric conversion device, andan inorganic film that is formed by being laminated on a light-incidentsurface and side surfaces of the organic film and seals the organicfilm, the side surfaces of the organic film being tilted by an angle atwhich a thickness of the inorganic film that is formed by beinglaminated on the side surfaces becomes a predetermined thickness; and animage processing section that performs image processing on pickup imagedata obtained by the image pickup device.
 15. A production apparatusthat produces an image pickup device, comprising: a photoelectricconversion device formation section that forms a photoelectricconversion device thin photoelectrically converts incident light thatenters from outside; an organic film formation section that forms anorganic film by laminating it on a light-incident surface side of thephotoelectric conversion device; an organic film processing section thatprocesses the organic film formed in the organic film formation sectionwhile imparting, to side surfaces of the organic film, a tilt by anangle at which a thickness of the inorganic film that is formed by beinglaminated on the side surfaces becomes a predetermined thickness; and aninorganic film formation section that forms an inorganic film that sealsthe organic film by laminating it on a light-incident surface and sidesurfaces of the organic film.
 16. The production apparatus according toclaim 15, wherein the inorganic film formation section forms theinorganic film laminated on the light-incident surface of the organicfilm and the inorganic film laminated on the side surfaces of theorganic film in the same step.
 17. The production apparatus according toclaim 15, wherein the inorganic film formation section forms theinorganic film laminated on the light-incident surface of the organicfilm and the inorganic film laminated on the side surfaces of theorganic film in different steps.
 18. A production method for aproduction apparatus that produces an image pickup device, comprising:forming a photoelectric conversion device that photoelectricallyconverts incident light that enters from outside; forming an organicfilm by laminating it on a light-incident surface side of thephotoelectric conversion device; processing the formed organic filmwhile imparting, to side surfaces of the organic film, a tilt by anangle at which a thickness of the inorganic film that is formed by beinglaminated on the side surfaces becomes a predetermined thickness; andforming an inorganic film that seals the organic film by laminating iton a light-incident surface and side surfaces of the organic film.
 19. Aproduction apparatus that produces an image pickup device, comprising:an image pickup device formation section that forms an image pickupdevice that photoelectrically converts incident light that enters fromoutside; a rib formation section that forms on a transparent layerformed of glass or resin; an inorganic formation section that forms aninorganic film by laminating it on a surface of the transparent layer onwhich the ribs are formed by the rib formation section; an organic filmformation section that forms an organic film by laminating it on theinorganic film formed by being laminated on the transparent layer by theit panic formation section; and a bonding section that bonds the organicfilm formed by being laminated on the transparent layer by the organicfilm formation section and a light-incident surface of the image pickupdevice formed by the image pickup device formation section.
 20. Aproduction method for a production apparatus that produces an imagepickup device, comprising: forming an image pickup device thatphotoelectrically converts incident light that enters from outside;forming ribs on a transparent layer formed of glass or resin; forming aninorganic film by laminating it on a surface of the transparent layer onwhich the ribs are formed; forming an organic film by laminating it onthe inorganic film formed by being laminated on the transparent layer;and bonding the organic film formed by being laminated on thetransparent layer and a light-incident surface of the formed imagepickup device.